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A Study on Doping Effects in Silicon Nanostructures for Enhanced Electrical Conductivity

Author(s):Harish, J. Shalini, R. Ankit, Y. P. Kumar

Affiliation: Department of Physics, Chaudhary Charan Singh (CCS) University, Meerut, Uttar Pradesh, India

Page No: 15-19

Volume issue & Publishing Year: Volume 2, Issue 8, Aug 2025

published on: 2025/08/30

Journal: International Journal of Advanced Multidisciplinary Application.(IJAMA)

ISSN NO: 3048-9350

DOI: https://doi.org/10.5281/zenodo.17572409

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Abstract:
Silicon continues to be the cornerstone of modern semiconductor technology owing to its abundance, stability, and versatility in electronic applications. However, the miniaturization of devices and the emergence of nanostructured materials have demanded improved conductivity and tailored properties. Doping, the intentional introduction of foreign atoms into the silicon lattice, is a widely used strategy to enhance its electrical behavior. This paper investigates the role of doping in silicon nanostructures, with a focus on how dopant concentration, type, and distribution affect conductivity. Through a review of experimental studies and theoretical models, the work highlights the influence of n-type and p-type dopants on carrier mobility, bandgap modification, and overall device performance. The findings suggest that doping at the nanoscale introduces unique challenges such as quantum confinement effects and dopant clustering, but also provides opportunities for high-performance nanoelectronics and optoelectronic devices.

Keywords: Silicon nanostructures, doping, electrical conductivity, carrier mobility, semiconductor physics

Reference:

  • 1 W. Shockley, The theory of p n junctions in semiconductors and p n junction transistors, Bell System Technical Journal, vol. 28, no. 3, pp. 435–489, 1949.<br>
  • 2 Y. Cui, X. Duan, J. Hu, and C. M. Lieber, Doping and electrical transport in silicon nanowires, Journal of Physical Chemistry B, vol. 104, no. 22, pp. 5213–5216, 2000.<br>
  • 3 F. Leonard and J. Tersoff, Role of Fermi-level pinning in nanotube Schottky diodes, Physical Review Letters, vol. 84, no. 20, pp. 4693–4696, 2000.<br>
  • 4 C. Thelander, H. A. Nilsson, L. E. Jensen, and L. Samuelson, Nanowire single-electron memory, Nano Letters, vol. 5, no. 4, pp. 635–638, 2005.<br>